Samsung may have prematurely placed its bets on the 10 nanometer processor technology. KAIST IP, the U.S. based intellectual property management arm of the Korea Advanced Institute of Science and Technology, has sued Samsung Electronics, Qualcomm and Global Foundries over their use of FinFET technology which was expected to power Galaxy S8’s Snapdragon 835 processor in a Texas court, according to Korea Herald.
FinFET is manufacturing technology that uses a 10 nanometer chip-based processor to provide 27 percent better performance and 40 percent lower power consumption compared to existing processors such as the Samsung Exynos 7420.
The lawsuit claims that the companies named in it are using the KAIST chip technology without permission. It further alleges that FinFET was stolen by Samsung when it invited FinFET developer Lee-Jong Ho for a presentation at Samsung headquarters. Lee is a professor at Seoul National University, KAIST’s partner institution. KAIST will also include Taiwan Semiconductor Manufacturing Company in the lawsuit once it procures the proof of patent infringement.
However, Samsung and Qualcomm are not the only companies using the technology. Intel is also working on it, but it has acquired the license from KAIST.
Earlier, rumors indicated a February 2017 launch for the Samsung Galaxy S8, during MWC 2017. It remains to be seen whether this development delays the launch of the device.